M-center in low-dose proton implanted 4H-SiC; Bistability and change in emission rate
2005 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2004 / [ed] Nipoti R., Poggi A., Scorzoni A ., 2005, Vol. 483, 497-500 p.Conference paper (Refereed)
4H-SiC schottky diodes have been implanted with 2.5 MeV protons to a dose of 1 x 10(12) cm(-2) and measured by deep level transient spectroscopy (DLTS). Between annealings at 150 &DEG; C and 200 &DEG; C the whole DLTS-spectra shift in temperature, most clearly revealed for the Z and M-center levels. The shift corresponds to a decrease in emission rate at a given temperature by approximately a factor of 5. It is speculated that the reason for this change in emission rate is to be found in the surrounding material rather than in the defects themselves.
Place, publisher, year, edition, pages
2005. Vol. 483, 497-500 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 483
4H-SiC DLTS, bistable, metastable, ion implantation, emission rate
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-25722ISI: 000228549600117ScopusID: 2-s2.0-25144484102OAI: oai:DiVA.org:kth-25722DiVA: diva2:359579
5th European Conference on Silicon Carbide and Related Materials Bologna, ITALY, AUG 31-SEP 04, 2004
QC 201010282010-10-282010-10-282012-09-24Bibliographically approved