Microfabricated heteroepitaxial oxide structures on silicon for bolometric arrays
2005 (English)In: 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings, Anaheim, CA, 2005, 521-524 p.Conference paper (Refereed)
The microfabrication of the free standing perovskite La0.67(Sr, Ca)0.33 MnO3 (LSCMO) thin films on silicon substrates with epitaxial grown oxide buffer layers was investigated for microbolometer application. The Ar ion etching (IBE) rate of LSCMO films was found to be 16 nm/min. Using pre-annealed photoresist patterning, the free standing LSCMO pixels on epitaxial buffer oxide membrane were realized by the IBE and SF 6 inductive coupled plasma (ICP) etching process. These results can be utilized as thermally isolated membrane for heteroepitaxial oxide structures.
Place, publisher, year, edition, pages
Anaheim, CA, 2005. 521-524 p.
(LSCMO), Membrane, Micromachining, Si, Arrays, Bolometers, Epitaxial growth, Substrates, Thin films, Buffer layers, Heteroepitaxial oxide, Silicon
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-25790ScopusID: 2-s2.0-32044472787ISBN: 0976798522 (ISBN)OAI: oai:DiVA.org:kth-25790DiVA: diva2:359882
2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005; Anaheim, CA; 8 May 2005 through 12 May 2005
QC 201011012010-11-012010-11-012010-11-01Bibliographically approved