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Polarization dependence of the optical response in SnO2 and the effects from heavily F doping
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
Departamento de Física, Universidade Federal do Paraná.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.ORCID iD: 0000-0002-9050-5445
2009 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, no 23, 6301-6304 p.Article in journal (Refereed) Published
Abstract [en]

The optical properties of intrinsic SnO2 (TO) and fluorine doped (FTO) are characterized in terms of the dielectric function epsilon(h omega) = epsilon(1) (h omega) + i epsilon(2)(h omega) by electronic structure calculations. The intrinsic TO shows intriguing absorption characteristics in the 3.0-8.0 eV region: (i) the low energy region of the fundamental band gap (3.2<h omega<3.9 eV), the optical transitions Gamma(+)(3) -> Gamma(+)(1) (valence-band maximum to conduction-band minimum) is symmetry forbidden, and the band-edge absorption is therefore extremely weak. (ii) In the higher energy region (3.9<h omega<5.1 eV) the Gamma(-)(5) -> Gamma(+)(1), transitions (from the second uppermost valence band) is strongly polarized perpendicular to the main c axis. (iii) Transitions with polarization axis parallel to c axis are generated from Gamma(-)(2) -> Gamma(+)(1) transitions (from the third uppermost valence bands), and dominates at high energies (5.1<h omega eV). Heavily F doped TO (FTO) with doping concentrations n(F) = 4 x 10(20) cm(-3) changes the absorption significantly: (iv) Substitutional F-O generates strong inter-conduction band absorption at 0.8, 2.2, and 3.8 eV which affects also the high frequency dielectric constant epsilon(infinity). (v) Interstitial F-i is inactive as a single dopant, but act as a compensating acceptor in highly n-type FTO. This explains the measured non-linear dependence of the resistivity with respect to F concentration.

Place, publisher, year, edition, pages
2009. Vol. 517, no 23, 6301-6304 p.
Keyword [en]
Tin oxide, Fluorine doping, Optical properties, Polarization effect
National Category
Other Engineering and Technologies not elsewhere specified
Identifiers
URN: urn:nbn:se:kth:diva-26007DOI: 10.1016/j.tsf.2009.02.063ISI: 000269930400021Scopus ID: 2-s2.0-68349118134OAI: oai:DiVA.org:kth-26007DiVA: diva2:362411
Note
QC 20101109 Uppdaterad från submitted till published 20101109.Available from: 2010-11-09 Created: 2010-11-09 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Electrical and optical properties of thin film SnO2 and SnO2:F: transparent electrodes in organic photovoltaics
Open this publication in new window or tab >>Electrical and optical properties of thin film SnO2 and SnO2:F: transparent electrodes in organic photovoltaics
2008 (English)Licentiate thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: KTH, 2008. x, 46 p.
National Category
Other Engineering and Technologies not elsewhere specified
Identifiers
urn:nbn:se:kth:diva-4832 (URN)978-91-7178-958-7 (ISBN)
Presentation
2008-06-12, K408, KTH, Brinellvägen 23, Stockholm, 10:00
Opponent
Supervisors
Note
QC 20101109Available from: 2008-06-17 Created: 2008-06-17 Last updated: 2010-11-09Bibliographically approved

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