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Structurally-tolerant vertical directional coupling between metal-insulator-metal plasmonic waveguide and silicon dielectric waveguide
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
2010 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 18, no 15, 15531-15543 p.Article in journal (Refereed) Published
Abstract [en]

Vertical directional coupling between a metal-insulator-metal (MIM) plasmonic waveguide and a conventional dielectric waveguide is investigated. The coupling length, extinction ratio, insertion loss and coupling efficiency of the hybrid coupler are analyzed. As an example, when the separation between the two waveguides is 250 nm, a maximum coupling efficiency of 73%, an insertion loss of -1.4 dB and an extinction ratio of 16 dB can be achieved at a coupling length of 4.5 mu m at 1.55 mu m wavelength. A particular feature of this hybrid coupler is that it is highly tolerant to the structural parameters of the plasmonic waveguide and the misalignment between the two waveguides. The performance of this hybrid coupler as a TM polarizer is also analyzed and a maximum extinction ratio of 44 dB and an insertion loss of -0.18 dB can be obtained. The application of this hybrid coupler includes the signal routing between plasmonic waveguides and dielectric waveguides in photonic integrated circuits and the polarization control between TE and TM modes. In addition, it provides an approach for efficiently exciting MIM plasmonic modes with conventional dielectric modes. (C) 2010 Optical Society of America

Place, publisher, year, edition, pages
2010. Vol. 18, no 15, 15531-15543 p.
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-26872ISI: 000280693300029Scopus ID: 2-s2.0-77954950466OAI: oai:DiVA.org:kth-26872DiVA: diva2:373676
Note
QC 20101201Available from: 2010-12-01 Created: 2010-11-29 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Silicon Based Photonic Devices and Their Applications
Open this publication in new window or tab >>Silicon Based Photonic Devices and Their Applications
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The integration of modern electronic devices for information processing is rapidly ap-proaching an interconnect bottleneck. Silicon photonics can be a promising solution forcircumventing this bottleneck, as already being anticipated by many electronics manu-facturers including HP, IBM and Intel. In particular, optical interconnects can expeditedata transfer both between and within microchips. This thesis aims at two basic buildingblocks of silicon photonics: waveguides and resonators and addresses their applications inoptical signal processing and their potential integration with plasmonic devices.

Firstly, the basic theories of waveguide and resonator are introduced. For a singleresonator which acts as a basic signal processing unit, the transmission, phase shift andgroup delay exhibit unique characteristics. Mode splitting is observed in both a singleresonator and a coupled-resonator system. By tuning the configuration of the coupled-resonator system, one can obtain different transmission characteristics for more advancedsignal processing.

Secondly, the fabrication and characterization of silicon waveguides and resonatorsused in the thesis are introduced. The fabrication is carried out with e-beam lithographyfollowed by inductively coupled plasma etching. A vertical grating coupling method isadopted to characterize the transmission spectrum.

Thirdly, based on a single-ring resonator, three kinds of signal processing are ex-perimentally demonstrated: (1) 10 Gb/s format conversion from non-return-to-zero toalternate-mark-inversion signal; (2) a microwave photonic phase shifter providing a tun-able phase shift of 0–4.6 rad for a 20 GHz signal; (3) a delay line providing maximaldelay times of 80 ps, 95 ps, 110 ps and 65 ps, respectively, for signals in return-to-zero,carrier-suppressed return-to-zero, return-to-zero duobinary, and return-to-zero alternate-mark-inversion formats.

Fourthly, based on a single-ring resonator with mode-splitting, two kinds of signalprocessing are experimentally demonstrated: (1) a dense wavelength conversion using thefree carrier dispersion effect with a data rate ranging from 500 Mb/s to 5 Gb/s; (2) amaximum pulse advancement of 130 ps for a 1 ns signal pulse.

Since silicon photonic devices are limited by diffraction limit, we further look intotheir hybridization with the diffraction-limit-free plasmonic devices. Two directional cou-plers from a Si photonic waveguide to a hybrid Si-metal plasmonic waveguide and to ametal-insulator-metal plasmonic waveguide are investigated. The proposed hybrid cou-plers feature a short coupling length, a high coupling efficiency, a high extinction ratioand a low insertion loss.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2011. xv, 75 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-31290 (URN)
Public defence
2011-04-07, Sal / Hall C1, KTH-Electrum, Isafjordsgatan 22, Kista, 10:00 (English)
Opponent
Supervisors
Note
QC 20110315Available from: 2011-03-15 Created: 2011-03-11 Last updated: 2011-03-15Bibliographically approved

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