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Spatially resolved characterization of InGaAs/GaAs quantum dot structures by scanning spreading resistance microscopy
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
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2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, no 4, 041106- p.Article in journal (Refereed) Published
Abstract [en]

Cross-sectional scanning spreading resistance microscopy (SSRM) is used to investigate stacked InGaAs/GaAs quantum dot (QD) structures with different doping schemes. Spatially resolved imaging of the QDs by SSRM is demonstrated. The SSRM contrast obtained for the QD layers is found to depend on doping in the structure. In the undoped structures both QD-layers and QDs within the layers could be resolved, while in the doped structures the QD layers appear more or less uniformly broadened. The origin of the SSRM contrast in the QD layer in the different samples is discussed and correlated with doping schemes. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3467138]

Place, publisher, year, edition, pages
2010. Vol. 97, no 4, 041106- p.
Keyword [en]
gallium arsenide, indium compounds, semiconductor doping, semiconductor growth, semiconductor quantum dots
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-26860DOI: 10.1063/1.3467138ISI: 000281059200006Scopus ID: 2-s2.0-77955728683OAI: oai:DiVA.org:kth-26860DiVA: diva2:373711
Funder
Swedish Research CouncilKnut and Alice Wallenberg Foundation
Note
QC 20101201Available from: 2010-12-01 Created: 2010-11-29 Last updated: 2017-12-12Bibliographically approved

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