Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors
2010 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 31, no 7, 707-709 p.Article in journal (Refereed) Published
Radiation hardness is tested for 4H-SiC n-p-n bipolar junction transistors designed for 1200-V breakdown voltage by implanting MeV protons and carbon ions at different doses and energies. The current gain is found to be a very sensitive parameter, and a fluence as low as 1 x 107 cm(-2) of 10 MeV C-12 can be clearly detected in the forward-output characteristics, I-C(V-CE). At this low dose, no influence of ion radiation is seen in the open-collector characteristics, I-B(V-EB), or the reverse bias leakage and breakdown properties. Moreover, by annealing the implanted devices at 420 degrees C for 30 min, a complete recovery of the electrical characteristics is accomplished.
Place, publisher, year, edition, pages
2010. Vol. 31, no 7, 707-709 p.
Annealing, bipolar junction transistor (BJT), current gain, point defects, radiation hardness, silicon carbide (SiC)
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-26662DOI: 10.1109/LED.2010.2047237ISI: 000281833100025ScopusID: 2-s2.0-77954142214OAI: oai:DiVA.org:kth-26662DiVA: diva2:373904
QC 201012022010-12-022010-11-262012-01-17Bibliographically approved