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On the film density using high power impulse magnetron sputtering
KTH, School of Electrical Engineering (EES), Space and Plasma Physics.
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2010 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 205, no 2, 591-596 p.Article in journal (Refereed) Published
Abstract [en]

The influence on thin film density using high power impulse magnetron sputtering (HIPIMS) has been investigated for eight different target materials (Al, Ti, Cr. Cu, Zr, Ag, Ta, and Pt). The density values as well as deposition rates have been compared to results obtained from thin films grown by direct current magnetron sputtering (DCMS) under the same experimental conditions. Overall, it was found that the HIPIMS deposited coatings were approximately 5-15% denser compared to the DCMS deposited coatings This could be attributed to the increased metal ion bombardment commonly seen in HIPIMS discharges, which also was verified using a global plasma model to assess the degree of ionization of sputtered metal One key feature is that the momentum transfer between the growing film and the incoming metal ions is very efficient due to the equal mass of film and bombarding species, leading to a less pronounced columnar microstructure As expected the deposition rates were found to be lower for HiPIMS compared to DCMS For several materials this decrease is not as pronounced as previously reported in the literature, which is shown in the case of Ta. Pt, and Ag with rate(HIPIMS)/rate(DCMS)-70-85%. while still achieving denser coatings.

Place, publisher, year, edition, pages
2010. Vol. 205, no 2, 591-596 p.
Keyword [en]
HIPIMS, HPPMS, DCMS, Density, RBS, Global plasma model
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-26623DOI: 10.1016/j.surfcoat.2010.07.041ISI: 000282542300053Scopus ID: 2-s2.0-77956436151OAI: oai:DiVA.org:kth-26623DiVA: diva2:374778
Note

QC 20101206

Available from: 2010-12-06 Created: 2010-11-26 Last updated: 2017-12-11Bibliographically approved

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Raadu, Michael A.Gudmundsson, Jon Tomas
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