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Lower bound of energy dissipation in optical excitation transfer via optical near-field interactions
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
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2010 (English)In: Optics Express, ISSN 1094-4087, Vol. 18, no 23, A544-A553 p.Article in journal (Refereed) Published
Abstract [en]

We theoretically analyzed the lower bound of energy dissipation required for optical excitation transfer from smaller quantum dots to larger ones via optical near-field interactions. The coherent interaction between two quantum dots via optical near-fields results in unidirectional excitation transfer by an energy dissipation process occurring in the larger dot. We investigated the lower bound of this energy dissipation, or the intersublevel energy difference at the larger dot, when the excitation appearing in the larger dot originated from the excitation transfer via optical near-field interactions. We demonstrate that the energy dissipation could be as low as 25 mu eV. Compared with the bit flip energy of an electrically wired device, this is about 10(4) times more energy efficient. The achievable integration density of nanophotonic devices is also analyzed based on the energy dissipation and the error ratio while assuming a Yukawa-type potential for the optical near-field interactions.

Place, publisher, year, edition, pages
2010. Vol. 18, no 23, A544-A553 p.
Keyword [en]
Bit-flips, Coherent interaction, Energy differences, Energy efficient, Error ratio, Excitation transfer, Integration density, Lower bounds, Nanophotonic devices, Optical excitations, Optical near field, Optical near-field interaction, Quantum Dot, Energy dissipation, Energy dissipators, Nanophotonics, Photoexcitation, Semiconductor quantum dots
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URN: urn:nbn:se:kth:diva-27062ISI: 000283940900008ScopusID: 2-s2.0-78149460963OAI: diva2:376705
QC 20101213Available from: 2010-12-13 Created: 2010-12-06 Last updated: 2010-12-13Bibliographically approved

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Holmström, PetterThylén, Lars
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