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Static Zero-Power-Consumption Coplanar Waveguide Embedded DC-to-RF Metal-Contact MEMS Switches in Two-Port and Three-Port Configuration
KTH, School of Electrical Engineering (EES), Microsystem Technology.
KTH, School of Electrical Engineering (EES), Microsystem Technology.
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0001-9552-4234
KTH, School of Electrical Engineering (EES), Microsystem Technology.
2010 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 57, no 7, 1659-1669 p.Article in journal (Refereed) Published
Abstract [en]

This paper reports on novel electrostatically actuated dc-to-RF metal-contact microelectromechanical systems (MEMS) switches, featuring a minimum transmission line discontinuity since the whole switch mechanism is completely embedded inside the signal line of a low-loss 3-D micromachined coplanar waveguide. Furthermore, the switches are based on a multistable interlocking mechanism resulting in static zero-power consumption, i.e., both the onstate and the offstate are maintained without applying external actuation energy. Additionally, the switches provide with active opening capability, potentially improving the switch reliability, and enabling the usage of soft low-resistivity contact materials. Both two-port single-pole-single-throw (SPST) switches featuring mechanical bistability and three-port single-pole-double-throw (SPDT) T-junction switches with four mechanically stable states are presented. The switches, together with the transmission lines, are fabricated in a single photolithography process. The loss created by the discontinuity of the switch mechanism alone is 0.08 dB at 20 GHz. Including a 500 mu m long transmission line with less than 0.4 dB/mm loss up to 20 GHz, the total insertion loss of the two-port devices is 0.15 and 0.3 dB at 2 and 20 GHz, and the isolation is 45 and 25 dB at 2 and 20 GHz. The three-port switches, including their T-junction transmission line, have an insertion loss of 0.31 and 0.68 dB, and an isolation of 43 and 22 dB, at 1 and 10 GHz, respectively. Actuation voltages are 23-39 V for the two-port switches and 39-89 V for the three-port switches. The microwave propagation in the micromachined transmission line and the influence of the different switch designs were analyzed by finite-element method (FEM) simulations of electromagnetic energy and volume current distributions, proving the design advantages of the proposed concept.

Place, publisher, year, edition, pages
IEEE , 2010. Vol. 57, no 7, 1659-1669 p.
Keyword [en]
Electrostatic actuator, RF microelectromechanical systems (MEMS), switch
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-27274DOI: 10.1109/TED.2010.2048239ISI: 000278995900022ScopusID: 2-s2.0-77954028661OAI: diva2:377605
© 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. QC 20101214Available from: 2011-12-08 Created: 2010-12-09 Last updated: 2012-11-01Bibliographically approved
In thesis
1. Monocrystalline-Silicon Based RF MEMS Devices
Open this publication in new window or tab >>Monocrystalline-Silicon Based RF MEMS Devices
2012 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis presents novel radio-frequency microelectromechanical (RF MEMS) devices, for microwave and millimeter wave applications, designed for process robustness and operational reliability using monocrystalline silicon as structural material. Two families of RF MEMS devices are proposed. The first comprises reconfigurable microwave components integrated with coplanar-waveguide transmission lines in the device layer of silicon-on-insulator wafers. The second consists of analog tuneable millimeter wave high-impedance surface arrays.

The first group of reconfigurable microwave components presented in this thesis is based on a novel concept of integrating MEMS functionality into the sidewalls of three-dimensional micromachined transmission lines. A laterally actuated metal-contact switch was implemented, with the switching mechanism completely embedded inside the signal line of a coplanar-waveguide transmission line. The switch features zero power-consumption in both the on and the off state since it is mechanically bistable, enabled by interlocking hooks. Both two-port and three-port configurations are presented. Furthermore, tuneable capacitors based on laterally moving the ground planes in a micromachined coplanar-waveguide transmission line are demonstrated.

The second group of reconfigurable microwave components comprises millimeter-wave high-impedance surfaces. Devices are shown for reflective beam steering, reflective stub-line phase shifters and proximity based dielectric rod waveguide phase shifters, as well as a steerable leaky-wave antenna device based on the same geometry. Full wafer transfer bonding of symmetrically metallized monocrystalline silicon membranes, for near-ideal stress compensation, is used to create large arrays of distributed MEMS tuning elements. Furthermore, this thesis investigates the integration of reflective MEMS millimeter wave devices in rectangular waveguides using a conductive adhesive tape, and the integration of substrates with mismatched coefficients of thermal expansion.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2012. x, 67 p.
Trita-EE, ISSN 1653-5146 ; 2012:050
RF MEMS, radio frequency, microelectromechanical system, microsystem technology, monocrystalline silicon, switch, tuneable capacitor, high-impedace surface, phase shifter, rectangular waveguide, transmission line
National Category
Engineering and Technology
urn:nbn:se:kth:diva-104314 (URN)978-91-7501-532-3 (ISBN)
Public defence
2012-11-23, F3, Lindstedtsvägen 26, KTH, Stockholm, 10:00 (English)

QC 20121101

Available from: 2012-11-01 Created: 2012-10-31 Last updated: 2012-11-01Bibliographically approved

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