High-resolution X-ray photoemission spectroscopy study of AlN nano-columns grown by nitridation of Al nano-squares on Si(111) substrates with ammonia
2010 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 518, no 14, 3632-3639 p.Article in journal (Refereed) Published
The growth of AlN nano-columns by ammonium nitridation of Al nano-squares embedded in SiO2 on Si(111) substrates was studied by high-resolution X-ray photoemission spectroscopy from a synchrotron radiation source and scanning electron microscopy (SEM). Selective nitridation of the Al nano-squares on the SiO2 mask was obtained in the temperature window of 600 degrees C-700 degrees C. The well-shaped AlN nano-column arrays with diameters confined by the lateral size of the Al nano-squares (similar to 100 nm) were observed in SEM.
Place, publisher, year, edition, pages
2010. Vol. 518, no 14, 3632-3639 p.
Nitridation, Nano-structures, Aluminum nitride, X-ray photoemission spectroscopy, Ammonium
IdentifiersURN: urn:nbn:se:kth:diva-27559DOI: 10.1016/j.tsf.2009.09.088ISI: 000278064600007ScopusID: 2-s2.0-77950615575OAI: oai:DiVA.org:kth-27559DiVA: diva2:378649
QC 20101216 Korrigering: "The authors acknowledge their fault that during the publication of this paper an error occurred within line 16 of Section 2: Experimental details. The complete and corrected sentence is reproduced below.
After PMMA development, the exposed SiO2 wells were etched by RIE in two steps: first in O2:CHF3 (30:20 sccm) at 50 W RF power and 6.67 Pa gas pressure for 5 s, then in Ar:CHF3 (25:25 sccm) at 150 W RF power and 4.00 Pa gas pressure for 10 min, which was sufficient to totally remove the exposed 50 nm thick SiO2 layer."2010-12-162010-12-132010-12-16Bibliographically approved