Improvement of infrared detection using Ge quantum dots multilayer structure
2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 21, 213516- p.Article in journal (Refereed) Published
Monocrystalline SiGe/Si multiquantum dot and well structures have been manufactured/compared as thermistor materials for infrared detection. The performance of the devices (both the thermal and electrical) has been very sensitive to the quality of the epitaxial layers which is evaluated by the interfacial roughness and strain amount. This study demonstrates that the devices containing quantum dots have higher thermal coefficient resistance 3.4%/K with a noise constant (K-1/f) value of 2x10(-9).
Place, publisher, year, edition, pages
2010. Vol. 96, no 21, 213516- p.
Ge-Si alloys, infrared detectors, interface roughness, internal stresses, noise, semiconductor epitaxial layers, semiconductor quantum dots, semiconductor quantum wells, thermal resistance, thermistors
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-27556DOI: 10.1063/1.3441120ISI: 000278183200092ScopusID: 2-s2.0-77956232780OAI: oai:DiVA.org:kth-27556DiVA: diva2:378751
QC 201012162010-12-162010-12-132011-04-05Bibliographically approved