Analysis of 1.2 kV SiC buried-grid VJFETs
2010 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T140, 014008- p.Article in journal (Refereed) Published
1.2 kV buried-grid vertical 4H-SiC JFET structures with normally-on (N-on) and normally-off (N-off) designs were investigated by simulation. The static and dynamic characteristics of the devices were determined over a wide range of current, voltage and gate drive conditions in the temperature range -50 degrees C to 250 degrees C. In this paper, the properties of the N-on designs with threshold voltages (V-th) -50 and -10 V are compared with the properties of the N-off design (V-th = 0). For constant V-th, on-resistance decreases and output current increases with increasing channel doping and decreasing channel width. Simulations show that an on-resistance lower than 2 m Omega cm(2) at 250 degrees C can be obtained provided the channel width is smaller than 1.5 and 0.5 mu m for N-on JFETs with V-th = -50 V and V-th = -10 V, respectively, and lower than 3 m Omega cm(2) provided the channel width is smaller than 0.3 mu m for the N-off JFET. At the same time, E-on decreases and E-off increases with increased channel doping concentration and reduced channel width. It is shown that E-on decreases with increasing channel doping concentration due to the reduced channel resistance for the faster turn-on process. E-off increases with increasing channel doping concentration due to the increase in gate-drain capacitance, C-GD.
Place, publisher, year, edition, pages
2010. Vol. T140, 014008- p.
IdentifiersURN: urn:nbn:se:kth:diva-27661DOI: 10.1088/0031-8949/2010/T141/014008ISI: 000284694500009ScopusID: 2-s2.0-79952386404OAI: oai:DiVA.org:kth-27661DiVA: diva2:381486
23rd Nordic Semiconductor Community Univ Iceland, Reykjavik, ICELAND, JUN 14-17, 2009
23rd Nordic Semiconductor Community, Univ Iceland, Reykjavik, ICELAND, JUN 14-17, 2009
QC 201012272010-12-272010-12-202015-09-15Bibliographically approved