Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs
2010 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T140, 014012- p.Article in journal (Refereed) Published
Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10(10)-10(11) cm(-2). The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.
Place, publisher, year, edition, pages
2010. Vol. T140, 014012- p.
INDUCED GAIN DEGRADATION, IRRADIATION, TRANSISTORS
Other Engineering and Technologies
IdentifiersURN: urn:nbn:se:kth:diva-27662DOI: 10.1088/0031-8949/2010/T141/014012ISI: 000284694500013ScopusID: 2-s2.0-79952365555OAI: oai:DiVA.org:kth-27662DiVA: diva2:382130
23rd Nordic Semiconductor Community Univ Iceland, Reykjavik, ICELAND, JUN 14-17, 2009
QC 201012292010-12-292010-12-202012-01-17Bibliographically approved