Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level.
2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, no 22, 223507- p.Article in journal (Refereed) Published
SiGe (C)/Si(C) multiquantum wells have been studied as a thermistor material for future bolometers. A thermistor material for uncooled Si-based thermal detectors with thermal coefficient of resistance of 4.5%/K for 100 x 100 mu m(2) pixel sizes and low noise constant (K-1/f) value of 4.4 x 10(-15) is presented. The outstanding performance of the devices is due to Ni-silicide contacts, smooth interfaces, and high quality multiquantum wells containing high Ge content.
Place, publisher, year, edition, pages
2010. Vol. 97, no 22, 223507- p.
IdentifiersURN: urn:nbn:se:kth:diva-27961DOI: 10.1063/1.3524211ISI: 000284965000089ScopusID: 2-s2.0-78650659237OAI: oai:DiVA.org:kth-27961DiVA: diva2:383081
QC 201101042011-01-042011-01-032011-04-05Bibliographically approved