Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Simulation study of an energy sensitive photon counting silicon strip detector for computed tomography: identifying strengths and weaknesses and developing work-arounds
KTH, School of Engineering Sciences (SCI), Physics, Medical Imaging.
KTH, School of Engineering Sciences (SCI), Physics, Medical Imaging.
Division of Electronic Devices, Linköping University.
KTH, School of Engineering Sciences (SCI), Physics, Medical Imaging.ORCID iD: 0000-0002-3039-9791
2010 (English)In: MEDICAL IMAGING 2010: PHYSICS OF MEDICAL IMAGING / [ed] Samei E; Pelc NJ, 2010, Vol. 7622Conference paper, Published paper (Refereed)
Abstract [en]

We model the effect of signal pile-up on the energy resolution of a photon counting silicon detector designed for high flux spectral CT with sub-millimeter pixel size. Various design parameters, such as bias voltage, lower threshold level for discarding of electronic noise and the entire electronic read out chain are modeled and realistic parameter settings are determined. We explicitly model the currents induced on the collection electrodes of a pixel and superimpose signals emanating from events in neighboring pixels, either due to charge sharing or signals induced during charge collection. Electronic noise is added to the pulse train before feeding it through a model of the read out electronics where the pulse height spectrum is saved to yield the detector energy response function. The main result of this study is that a lower threshold of 5 keV and a rather long time constant of the shaping filter (tau(0) = 30 ns) are needed to discard induced pulses from events in neighboring pixels. These induction currents occur even if no charge is being deposited in the analyzed pixel from the event in the neighboring pixel. There is also only a limited gain in energy resolution by increasing the bias voltage to 1000 V from 600 V. We show that with these settings the resulting energy resolution, as measured by the FWHM/E of the photo peak, is 5% at 70 keV.

Place, publisher, year, edition, pages
2010. Vol. 7622
Series
Proceedings of SPIE-The International Society for Optical Engineering, ISSN 0277-786X ; 7622
Keyword [en]
PERFORMANCE, DEPENDENCE
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-28193DOI: 10.1117/12.843914ISI: 000285047200126Scopus ID: 2-s2.0-79955757019ISBN: 978-0-8194-8023-1 (print)OAI: oai:DiVA.org:kth-28193DiVA: diva2:384842
Conference
Conference on Medical Imaging - Physics of Medical Imaging, San Diego, CA, FEB 15-18, 2010
Note
QC 20110110Available from: 2011-01-10 Created: 2011-01-10 Last updated: 2011-01-10Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Bornefalk, HansXu, ChengDanielsson, Mats
By organisation
Medical Imaging
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 45 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf