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Photoluminescence measurements in the phase transition region of Zn1-x Cd (x) S films
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
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2010 (English)In: Journal of nanoparticle research, ISSN 1388-0764, E-ISSN 1572-896X, Vol. 12, no 4, 1415-1421 p.Article in journal (Refereed) Published
Abstract [en]

Thin films of Zn1-x Cd (x) S (0.1 a parts per thousand currency sign x a parts per thousand currency sign 0.5) were prepared by using pulsed laser ablation technique on corning glass substrates. Phase transition from cubic to hexagonal in Zn1-x Cd (x) S films is determined by X-ray diffraction analysis. We observed a lowering in the phase transition temperature with increase in the cadmium concentration. Transmission electron microscopy suggests the crystalline nature of thin films with average particle size of 15 nm. The grown Zn1-x Cd (x) S samples show the high peak intensity ratio of the near band edge emission to the defect center luminescence even at room temperature, which indicates the small concentration of complex defects in the samples. Photoluminescence measurement show stoichiometric dependence of the energy band gap and is found to have quadratic dependence on x.

Place, publisher, year, edition, pages
2010. Vol. 12, no 4, 1415-1421 p.
Keyword [en]
Photoluminescence, XRD, TEM, Laser diodes, Light emitting diodes
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-28248DOI: 10.1007/s11051-009-9687-xISI: 000276883600032ScopusID: 2-s2.0-77955087341OAI: diva2:388750
QC 20110118Available from: 2011-01-18 Created: 2011-01-12 Last updated: 2011-01-18Bibliographically approved

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Nagar, Sandeep
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