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Large-area InP-based crystalline nanomembrane flexible photodetectors
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2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 12, 121107- p.Article in journal (Refereed) Published
Abstract [en]

Large-area (3x3 mm(2)) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.

Place, publisher, year, edition, pages
2010. Vol. 96, no 12, 121107- p.
Keyword [en]
bending, dark conductivity, III-V semiconductors, indium compounds, membranes, nanostructured materials, photoconductivity, photodetectors, polymers
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-28388DOI: 10.1063/1.3372635ISI: 000276077200007Scopus ID: 2-s2.0-77950330878OAI: oai:DiVA.org:kth-28388DiVA: diva2:389343
Note
QC 20110119Available from: 2011-01-19 Created: 2011-01-14 Last updated: 2017-12-11Bibliographically approved

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Hammar, Mattias

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