Change search
ReferencesLink to record
Permanent link

Direct link
Large-area InP-based crystalline nanomembrane flexible photodetectors
Show others and affiliations
2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 12, 121107- p.Article in journal (Refereed) Published
Abstract [en]

Large-area (3x3 mm(2)) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.

Place, publisher, year, edition, pages
2010. Vol. 96, no 12, 121107- p.
Keyword [en]
bending, dark conductivity, III-V semiconductors, indium compounds, membranes, nanostructured materials, photoconductivity, photodetectors, polymers
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-28388DOI: 10.1063/1.3372635ISI: 000276077200007ScopusID: 2-s2.0-77950330878OAI: diva2:389343
QC 20110119Available from: 2011-01-19 Created: 2011-01-14 Last updated: 2011-01-19Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Berggren, JesperHammar, Mattias
By organisation
Integrated Devices and Circuits
In the same journal
Applied Physics Letters
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 19 hits
ReferencesLink to record
Permanent link

Direct link