Large-area InP-based crystalline nanomembrane flexible photodetectors
2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 12, 121107- p.Article in journal (Refereed) Published
Large-area (3x3 mm(2)) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.
Place, publisher, year, edition, pages
2010. Vol. 96, no 12, 121107- p.
bending, dark conductivity, III-V semiconductors, indium compounds, membranes, nanostructured materials, photoconductivity, photodetectors, polymers
IdentifiersURN: urn:nbn:se:kth:diva-28388DOI: 10.1063/1.3372635ISI: 000276077200007ScopusID: 2-s2.0-77950330878OAI: oai:DiVA.org:kth-28388DiVA: diva2:389343
QC 201101192011-01-192011-01-142011-01-19Bibliographically approved