Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states
2010 (English)In: Physica Status Solidi (A) Applications and Materials, ISSN 1862-6300, Vol. 207, no 2, 423-427 p.Article in journal (Refereed) Published
We report on photoluminescence (PL) studies of AlGaN/AlGaN multiple quantum well (MQW) structures with well widths spanning from 1.65 to 5.0 nm under various excitations and temperatures. The samples were fabricated by migration-enhanced metal-organic chemical vapor deposition technique (MEMOCVD (R)). Screening of the built-in electric field by photogenerated carriers reduced quantum-confined Stark effect (QCSE). This is confirmed by solving the Poisson and Schrodinger equations for AlGaN-based quantum wells (QWs) under study. Analysis of the PL internal quantum efficiency under different excitations in MQWs with different widths shows strong influence of the carrier localization on the radiative properties of MQWs.
Place, publisher, year, edition, pages
2010. Vol. 207, no 2, 423-427 p.
LIGHT-EMITTING-DIODES, AL(X)GA1-XN ALLOYS, DEPENDENCE
Electrical Engineering, Electronic Engineering, Information Engineering Physical Sciences
IdentifiersURN: urn:nbn:se:kth:diva-28689DOI: 10.1002/pssa.200925227ISI: 000275148400032ScopusID: 2-s2.0-76949104460OAI: oai:DiVA.org:kth-28689DiVA: diva2:390421
QC 201101212011-01-212011-01-192012-11-01Bibliographically approved