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Dissociation energy of the passivating hydrogen-aluminum complex in 4H-SiC
KTH, Superseded Departments, Electronics.
KTH, Superseded Departments, Electronics.
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-0292-224X
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-4148-5679
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2001 (English)In: Materials Science Forum, 2001, Vol. 353-356, 427-430 p.Conference paper, Published paper (Other academic)
Abstract [en]

The thermal stability of the passivating hydrogen-aluminum complex ((HAl)-H-2) in 4H-silicon carbide has been studied by determining the effective diffusion constant for hydrogen in an AI-doped epitaxial layer. Assuming a complex comprised of one H-2 and one AI acceptor ion, the extracted diffusivities provide the dissociation frequency of the complex. The extracted frequencies cover three orders of magnitude and yield a close to perfect fit to an Arrhenius equation with the extracted dissociation energy for the (HAl)-H-2-complex equal to 1.66 (+/-0.05) eV and a pre-exponential attempt frequency nu (0) = 1.7x10(13) s(-1) in good agreement with the expected value for a first order dissociation process.

Place, publisher, year, edition, pages
2001. Vol. 353-356, 427-430 p.
Series
Materials Science Forum, ISSN 0255-5476
Keyword [en]
hydrogen, passivation, SIMS
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-29570ISI: 000168535200104OAI: oai:DiVA.org:kth-29570DiVA: diva2:396014
Conference
3rd European Conference on Silicon Carbide and Related Materials
Note

QC 20110208

Available from: 2011-02-08 Created: 2011-02-08 Last updated: 2016-06-15Bibliographically approved

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Linnarsson, Margareta K.Nordell, Nils

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