Dissociation energy of the passivating hydrogen-aluminum complex in 4H-SiC
2001 (English)In: Materials Science Forum, 2001, Vol. 353-356, 427-430 p.Conference paper (Other academic)
The thermal stability of the passivating hydrogen-aluminum complex ((HAl)-H-2) in 4H-silicon carbide has been studied by determining the effective diffusion constant for hydrogen in an AI-doped epitaxial layer. Assuming a complex comprised of one H-2 and one AI acceptor ion, the extracted diffusivities provide the dissociation frequency of the complex. The extracted frequencies cover three orders of magnitude and yield a close to perfect fit to an Arrhenius equation with the extracted dissociation energy for the (HAl)-H-2-complex equal to 1.66 (+/-0.05) eV and a pre-exponential attempt frequency nu (0) = 1.7x10(13) s(-1) in good agreement with the expected value for a first order dissociation process.
Place, publisher, year, edition, pages
2001. Vol. 353-356, 427-430 p.
, Materials Science Forum, ISSN 0255-5476
hydrogen, passivation, SIMS
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-29570ISI: 000168535200104OAI: oai:DiVA.org:kth-29570DiVA: diva2:396014
3rd European Conference on Silicon Carbide and Related Materials
QC 201102082011-02-082011-02-082016-06-15Bibliographically approved