Damage recovery in ZnO by post-implantation annealing
2010 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 268, no 11-12, 1842-1846 p.Article in journal (Other academic) Published
ZnO bulk samples were implanted with 200 key-Co ions at room temperature with two fluences, 1 x 10(16) and 8 x 10(16) cm(-2), and then annealed in air for 30 min at different temperatures up to 900 degrees C. After the implantation and each annealing step, the samples were analyzed by Rutherford backscattering spectrometry (RBS) in random and channeling directions to follow the evolution of the disorder profile. The RBS spectra reveal that disorder is created during implantation in proportion to the Co fluence. The thermal treatments induce a disorder recovery, which is however, not complete after annealing at 900 degrees C, where about 15% of the damage remains. To study the Co profile evolution during annealing, the samples were, in addition to RBS, characterized by secondary ion mass spectrometry (SIMS). The results show that Co diffusion starts at 800 degrees C, but also that a very different behavior is seen for Co concentrations below and above the solubility limit. (C) 2010 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2010. Vol. 268, no 11-12, 1842-1846 p.
ZnO, Ion implantation, RBS/channeling, SIMS, Radiation damage, Dopant diffusion
Subatomic Physics Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-29697DOI: 10.1016/j.nimb.2010.02.032ISI: 000278702300033ScopusID: 2-s2.0-77953137219OAI: oai:DiVA.org:kth-29697DiVA: diva2:397285
19th International Conference on Ion Beam Analysis, Univ Cambridge, Cambridge, ENGLAND, SEP 07-11, 2009
QC 201102142011-02-142011-02-112011-02-14Bibliographically approved