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High current-gain implantation-free 4H-SiC Monolithic Darlington Transistor
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2011 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 2, 188-190 p.Article in journal (Refereed) Published
Abstract [en]

An implantation-free 4H-SiC Darlington transistor with high current gain of 2900 ( JC= \970A/cm2) and VCE) = 6V) at room temperature is reported. The device demonstrates a record maximum current gain of 640 at 200 hC, offering an attractive solution for high-temperature applications. The monolithic Darlington device exhibits an open-base breakdown voltage of 1 kV that is less than the optimum bulk breakdown due to isolation trench between the driver and the output bipolar junction transistor. On the same wafer, a monolithic Darlington pair with a nonisolated base layer was also fabricated. At room temperature, this device shows a maximum current gain of 1000 and an open-base breakdown voltage of 2.8 kV, which is 75% of the parallel-plane breakdown voltage

Place, publisher, year, edition, pages
2011. Vol. 32, no 2, 188-190 p.
Keyword [en]
4H-SiC, Darlington transistor
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-29775DOI: 10.1109/LED.2010.2090646ISI: 000286677700026Scopus ID: 2-s2.0-79151480542OAI: oai:DiVA.org:kth-29775DiVA: diva2:397688
Note
QC 20110215Available from: 2011-02-15 Created: 2011-02-15 Last updated: 2017-12-11Bibliographically approved

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Ghandi, RezaBuono, BenedettoDomeij, MartinÖstling, Mikael
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