Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation
2011 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 5, 596-598 p.Article in journal (Refereed) Published
In this letter, the dependence of current gain and base resistance on crystal orientations for single-finger 4H-SiC bipolar junction transistors ( BJTs) is analyzed. Statistical evaluation techniques were also applied to study the effect of surface passivation and mobility on the performance of the devices. It is shown that BJTs with an emitter edge aligned to the [1 (2) under bar 10] direction shows a lower current gain before surface passivation and higher base resistance after contact formation compared with other investigated crystal directions. However, the devices show a similar current gain independent of the crystal orientation after surface passivation.
Place, publisher, year, edition, pages
IEEE , 2011. Vol. 32, no 5, 596-598 p.
Bipolar junction transistors (BJTs), crystal orientation, silicon carbide
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-29779DOI: 10.1109/LED.2011.2117412ISI: 000289908500006ScopusID: 2-s2.0-79955545058OAI: oai:DiVA.org:kth-29779DiVA: diva2:397735
QC 201102152011-02-152011-02-152016-04-28Bibliographically approved