High Voltage (2.8 kV) Implantation-free 4H-SiC BJTs with Long-TermStability of the Current Gain
2011 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 58, no 8, 2665-2669 p.Article in journal (Refereed) Published
In this work, implantation-free 4H-SiC BJTs with high breakdown of 2800 V have been fabricated utilizing acontrolled two-step etched junction termination extension (JTE). The small area devices show a maximum dc current gainof 55 at Ic=0.33 A (JC=825 A/cm2) and VCESAT = 1.05 V at Ic = 0.107 A that corresponds to a low ON-resistance of 4mΩ·cm2. The large area device have a maximum dc current gain of 52 at Ic = 9.36 A (JC=289 A/cm2) and VCESAT = 1.14 Vat Ic = 5 A that corresponds to an ON-resistance of 6.8 mΩ·cm2. Also these devices demonstrate a negative temperaturecoefficient of the current gain (β=26 at 200°C) and a positive temperature coefficient of the ON-resistance (RON = 10.2mΩ·cm2 at 200°C). The small area BJT shows no bipolar degradation and low current gain degradation after 150 Hrs stressof the base-emitter diode with current level of 0.2A (JE=500 A/cm2). Also, large area BJT shows a VCE fall time of 18 nsduring turn-on and a VCE rise time of 10 ns during turn-off for 400 V switching characteristics.
Place, publisher, year, edition, pages
2011. Vol. 58, no 8, 2665-2669 p.
Bipolar junction transistors (BJT), power transistor, silicon carbide
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-29780DOI: 10.1109/TED.2011.2154332ISI: 000293708500059ScopusID: 2-s2.0-79960843602OAI: oai:DiVA.org:kth-29780DiVA: diva2:397749
Updated from submitted to published.2011-02-152011-02-152011-09-06Bibliographically approved