Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence
2010 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2009 / [ed] Bauer AJ; Friedrichs P; Krieger M; Pensl G; Rupp R; Seyller T, 2010, Vol. 645-648, 1037-1040 p.Conference paper (Refereed)
SiC power bipolar junction transistors (BJTs), for high voltage applications, have been studied under elevated temperature and electrical stress conditions. Electroluminescence has been used to capture effects of defect motion and growth, in complete transistor structures, leading to a quantifiable degradation in the electrical performance. The observed degradation of current gain (beta) and on-resistance (RON) was relatively modest and saturated after a limited stress time, resulting in stable device performance. The characteristic wavelength (450 nm) of the electroluminescence, or light emission, in the visual and near infrared (NIR) range, coupled to the shape of the defects indicates that basal plane dislocations and stacking faults are involved.
Place, publisher, year, edition, pages
2010. Vol. 645-648, 1037-1040 p.
, Materials Science Forum, ISSN 0255-5476 ; 645-648
4H-SiC, electroluminescence, degradation, stacking faults
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-29827DOI: 10.4028/www.scientific.net/MSF.645-648.1037ISI: 000279657600247ScopusID: 2-s2.0-77955457764OAI: oai:DiVA.org:kth-29827DiVA: diva2:398296
13th International Conference on Silicon Carbide and Related Materials, Nurnberg, GERMANY, OCT 11-16, 2009
QC 201102172011-02-172011-02-172011-02-17Bibliographically approved