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Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2010 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2009 / [ed] Bauer AJ; Friedrichs P; Krieger M; Pensl G; Rupp R; Seyller T, 2010, Vol. 645-648, 1037-1040 p.Conference paper, Published paper (Refereed)
Abstract [en]

SiC power bipolar junction transistors (BJTs), for high voltage applications, have been studied under elevated temperature and electrical stress conditions. Electroluminescence has been used to capture effects of defect motion and growth, in complete transistor structures, leading to a quantifiable degradation in the electrical performance. The observed degradation of current gain (beta) and on-resistance (RON) was relatively modest and saturated after a limited stress time, resulting in stable device performance. The characteristic wavelength (450 nm) of the electroluminescence, or light emission, in the visual and near infrared (NIR) range, coupled to the shape of the defects indicates that basal plane dislocations and stacking faults are involved.

Place, publisher, year, edition, pages
2010. Vol. 645-648, 1037-1040 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 645-648
Keyword [en]
4H-SiC, electroluminescence, degradation, stacking faults
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-29827DOI: 10.4028/www.scientific.net/MSF.645-648.1037ISI: 000279657600247Scopus ID: 2-s2.0-77955457764OAI: oai:DiVA.org:kth-29827DiVA: diva2:398296
Conference
13th International Conference on Silicon Carbide and Related Materials, Nurnberg, GERMANY, OCT 11-16, 2009
Note
QC 20110217Available from: 2011-02-17 Created: 2011-02-17 Last updated: 2011-02-17Bibliographically approved

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Malm, B. Gunnar

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