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Dopant incorporation in thin strained Si layers implanted with Sb
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2010 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 518, no 9, 2474-2477 p.Article in journal (Refereed) Published
Abstract [en]

The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been Studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry. X-ray diffraction and 4-point probe measurements Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior Particularly, increasing the tensile strain in the Si layer from 0 to 0 8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from similar to 7 to 30% Furthermore, 0 8% strain in antimony doped Si gives similar to 20% reduction in the sheet resistance in comparison to the unstrained sample.

Place, publisher, year, edition, pages
2010. Vol. 518, no 9, 2474-2477 p.
Keyword [en]
Strained Si, Ion implantation, Sb incorporation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-29929DOI: 10.1016/j.tsf.2009.09.160ISI: 000275615100042Scopus ID: 2-s2.0-76049116311OAI: oai:DiVA.org:kth-29929DiVA: diva2:398406
Note
QC 20110117 Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting, Strasbourg, FRANCE, JUN 08-12, 2009Available from: 2011-02-17 Created: 2011-02-17 Last updated: 2017-12-11Bibliographically approved

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Hallén, Anders

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Azarov, AlexanderZamani, AtiehRadamson, Henry H.Hallén, Anders
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