Dopant incorporation in thin strained Si layers implanted with Sb
2010 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 518, no 9, 2474-2477 p.Article in journal (Refereed) Published
The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been Studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry. X-ray diffraction and 4-point probe measurements Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior Particularly, increasing the tensile strain in the Si layer from 0 to 0 8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from similar to 7 to 30% Furthermore, 0 8% strain in antimony doped Si gives similar to 20% reduction in the sheet resistance in comparison to the unstrained sample.
Place, publisher, year, edition, pages
2010. Vol. 518, no 9, 2474-2477 p.
Strained Si, Ion implantation, Sb incorporation
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-29929DOI: 10.1016/j.tsf.2009.09.160ISI: 000275615100042ScopusID: 2-s2.0-76049116311OAI: oai:DiVA.org:kth-29929DiVA: diva2:398406
QC 20110117 Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting, Strasbourg, FRANCE, JUN 08-12, 20092011-02-172011-02-172011-02-17Bibliographically approved