4G CMOS Nanometer Receivers for Mobile Systems: Challenges and Solutions
2009 (English)In: ISSCS 2009: INTERNATIONAL SYMPOSIUM ON SIGNALS, CIRCUITS AND SYSTEMS, VOLS 1 AND 2, PROCEEDINGS,, NEW YORK: IEEE , 2009, 73-76 p.Conference paper (Refereed)
This paper presents the design challenges and solutions for 4G nanometer radio receivers for mobile devices. The specifications for the ZERO-IF/LOW-IF 4G receiver architecture are derived. Limitations due to the use of low-voltage nanometer technologies are described and novel circuit techniques, such as wideband noise reduction, inductoreless peaking, passive mixing, and low flicker noise amplification are proposed. Finally, a 1.2-V 90nm CMOS receiver front-end for the proposed WiMAX/LTE receiver is designed employing novel circuit techniques. The front-end covers 700 MHz - 6 GHz, providing a total gain of 34 dB, noise figure of 4 dB, flicker noise corner of 10 kHz, and a third order intercept point of -10dBm/0dBm, while consuming a total power of 10.2 mW.
Place, publisher, year, edition, pages
NEW YORK: IEEE , 2009. 73-76 p.
90nm CMOS, Circuit techniques, Design challenges, Flicker noise, Low flicker noise, Low-voltage, Mobile systems, Nanometer technology, Passive mixing, Receiver architecture, Third order intercept points, Total power, Wideband noise, Amplification, Broadband amplifiers, Mixer circuits, Mobile devices, Spurious signal noise
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-29924DOI: 10.1109/ISSCS.2009.5206201ISI: 000275854200018ScopusID: 2-s2.0-70449501257ISBN: 978-1-4244-3784-9OAI: oai:DiVA.org:kth-29924DiVA: diva2:398526
International Symposium on Signals, Circuits and Systems, Iasi, ROMANIA, JUL 09-10, 2009
QC 201102182011-02-182011-02-172011-02-18Bibliographically approved