Surface morphology of indium phosphide grown on silicon by nano-epitaxial lateral overgrowth
2009 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 6, no 12, 2785-2788 p.Article in journal (Refereed) Published
InP is grown on Si by nano-epitaxial lateral overgrowth (NELOG or nano-ELOG) on patterns consisting of net-type openings under different growth conditions. Surface morphology is characterized with AFM and profilometer and optical quality assessed by Micro Photoluminescence measurements (mu-PL). Results show that growth conditions affect both morphology and optical quality, with thicker layers generally corresponding to better surface morphology. Lower growth temperature seems to improve surface morphology irrespective of thickness, and ELOG layers exhibit significantly better morphology than the planar layer.
Place, publisher, year, edition, pages
2009. Vol. 6, no 12, 2785-2788 p.
IdentifiersURN: urn:nbn:se:kth:diva-29672DOI: 10.1002/pssc.200982546ISI: 000279548000043ScopusID: 2-s2.0-77951683616OAI: oai:DiVA.org:kth-29672DiVA: diva2:398645
15th International Semiconducting and Insulating Materials Conference (SIMC-XV)
QC 201102182011-02-182011-02-112013-09-09Bibliographically approved