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Structural damage in ZnO bombarded by heavy ions
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2010 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 84, no 8, 1058-1061 p.Article in journal (Refereed) Published
Abstract [en]

The effect of implantation parameters on damage build-up in ZnO bombarded with Bi and Er ions is studied by Rutherford backscattering/channelling spectrometry. The results show that the damage accumulation behaviour in ZnO is different dramatically from that in other semiconductors. In particular, a variation of implantation parameters, such as collision cascade density, sample temperature and ion flux, has only a minor influence on the damage accumulation in the crystal bulk for the case of such heavy ions. Moreover, an intermediate damage peak, between the surface and bulk defect peaks, is observed for all the irradiation conditions studied. The cascade density affects the behaviour of this intermediate peak with increasing ion dose.

Place, publisher, year, edition, pages
2010. Vol. 84, no 8, 1058-1061 p.
Keyword [en]
Ion implantation, Defects, ZnO
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-29899DOI: 10.1016/j.vacuum.2009.10.041ISI: 000276821700016ScopusID: 2-s2.0-77649232391OAI: diva2:398699
QC 20110218 19th International Conference on the Interaction of Ions with Surfaces, Zvenigorod, RUSSIA, AUG 21-25, 2009Available from: 2011-02-18 Created: 2011-02-17 Last updated: 2011-02-18Bibliographically approved

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Hallén, Anders
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Microelectronics and Applied Physics, MAP
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