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Circuit Modeling of Vertical Buried-Grid SiC JFETs
KTH, School of Electrical Engineering (EES), Electrical Machines and Power Electronics.ORCID iD: 0000-0001-7922-3407
KTH, School of Electrical Engineering (EES), Electrical Machines and Power Electronics.
KTH, School of Electrical Engineering (EES), Electrical Machines and Power Electronics.ORCID iD: 0000-0002-9850-9440
KTH, School of Electrical Engineering (EES), Electrical Machines and Power Electronics.
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2010 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2   / [ed] Bauer AJ; Friedrichs P; Krieger M; Pensl G; Rupp R; Seyller T, 2010, Vol. 645-648, 965-968 p.Conference paper, Published paper (Refereed)
Abstract [en]

The main problem when the conventional PSpice JFET model is used to simulate a vertical short-channel buried-grid JFET is caused by the constant values of Threshold Voltage (VTO) and Transconductance (BETA). This paper presents a new model for the vertical short-channel buried-grid 1200V JEET, where both VTO and BETA vary with respect to the Drain-Source voltage. Simulation data from Medici have been analyzed in order to extract the analytical equations for VTO and BETA. Also other PSpice parameters are extracted from these data. The proposed circuit model has been simulated in Matlab by optimizing the same algorithm that PSpice uses. A variety of results are shown and discussed in this paper.

Place, publisher, year, edition, pages
2010. Vol. 645-648, 965-968 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 645-648
Keyword [en]
JFET modeling, Vertical Buried-Grid SIC JFET, SiC JFET, PSpice, Medici
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-29665DOI: 10.4028/www.scientific.net/MSF.645-648.965ISI: 000279657600230Scopus ID: 2-s2.0-77955442320OAI: oai:DiVA.org:kth-29665DiVA: diva2:398956
Conference
13th International Conference on Silicon Carbide and Related Materials
Note
QC 20110221Available from: 2011-02-21 Created: 2011-02-11 Last updated: 2011-02-21Bibliographically approved

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Tolstoy, GeorgLim, Jang-KwonNee, Hans-Peter

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Tolstoy, GeorgPeftitsis, DimosthenisLim, Jang-KwonBakowski, MietekNee, Hans-Peter
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