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Scanning near-field optical spectroscopy of AlGaN-based light emitting diodes
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.ORCID iD: 0000-0002-4606-4865
2010 (English)In: GALLIUM NITRIDE MATERIALS AND DEVICES V / [ed] Chyi JI; Nanishi Y; Morkoc H; Litton CW; Piprek J; Yoon E, 2010, Vol. 7602Conference paper, Published paper (Refereed)
Abstract [en]

Electroluminescence of 285 and 340 nm AlGaN quantum well light emitting diodes (LEDs) has been studied by scanning near-field optical spectroscopy. In the 285 nm devices, the near-field scans revealed hexagonal cross hatch microcracks that can be related to strain relaxation. Besides, mu m size areas emitting with a higher intensity and at a longer wavelength, presumably, due to lower AlN molar fraction, have been observed. Near-field scans performed during subsequent days revealed that with time, intensity from these spots increases and emission wavelength shifts to the red, indicating further change in the quantum well alloy composition. This has allowed distinguishing a novel LED aging mechanism that involves locally increased current, heating and Al atom migration. For the 340 nm emitting device with lower Al content in the active region, no such features have been observed.

Place, publisher, year, edition, pages
2010. Vol. 7602
Series
Proceedings of SPIE, ISSN 0277-786X
Keyword [en]
AlGaN, UV light emitting diodes, scanning near-field optical spectroscopy
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-30264ISI: 000285576300018Scopus ID: 2-s2.0-77951743792ISBN: 978-0-8194-7998-3 (print)OAI: oai:DiVA.org:kth-30264DiVA: diva2:399268
Conference
Conference on Gallium Nitride Materials and Devices V San Francisco, CA, JAN 25-28, 2010
Note
QC 20110221Available from: 2011-02-21 Created: 2011-02-21 Last updated: 2011-02-21Bibliographically approved

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Marcinkevicius, Saulius

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