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Study of the Local Environment of Mn Ions Implanted in GaSb
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2010 (English)In: Acta Physica Polonica. A, ISSN 0587-4246, E-ISSN 1898-794X, Vol. 117, no 2, p. 286-292Article in journal (Refereed) Published
Abstract [en]

The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation.

Place, publisher, year, edition, pages
2010. Vol. 117, no 2, p. 286-292
Keyword [en]
GAAS SEMICONDUCTORS, MAGNETIC-PROPERTIES, BEAM DEPOSITION, FERROMAGNETS
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-29837ISI: 000277950400008Scopus ID: 2-s2.0-77949389946OAI: oai:DiVA.org:kth-29837DiVA, id: diva2:399881
Note
QC 20110224 8th National Meeting of the Synchrotron Radiation Users, Podlesice, POLAND, SEP 24-26, 2009Available from: 2011-02-24 Created: 2011-02-17 Last updated: 2017-12-11Bibliographically approved

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Hallén, Anders

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