Heterogeneous integration of indium phosphide on silicon by nano-epitaxial lateral overgrowth
2009 (English)In: 2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, 59-62 p.Conference paper (Refereed)
InP on Si is grown by nano-epitaxial lateral overgrowth (nano-ELOG) on patterns consisting of net-type openings under different growth conditions. Analysis shows that net-type patterns yield large lateral growth rate and good optical quality. Different growth conditions have a substantial impact on growth rate and some effect on surface morphology, as well as on the optical quality. Optical quality is deemed to be affected partly by the amount of dislocations arising from the difference in thermal expansion coefficient between the mask and the InP layer, and partly by the layer thickness and surface morphology.
Place, publisher, year, edition, pages
2009. 59-62 p.
, International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
Epitaxial lateral overgrowth, Good optical quality, Growth conditions, Heterogeneous integration, InP, Lateral growth, Layer thickness, Optical qualities, Thermal expansion coefficients, Indium, Indium phosphide, Morphology, Semiconducting silicon compounds, Surface morphology, Thermal expansion
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-30437DOI: 10.1109/ICIPRM.2009.5012415ISI: 000270539400016ScopusID: 2-s2.0-70349505800ISBN: 978-1-4244-3432-9OAI: oai:DiVA.org:kth-30437DiVA: diva2:399956
21st International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, MAY 10-14, 2009
QC 201102242011-02-242011-02-242011-02-24Bibliographically approved