Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Heterogeneous integration of indium phosphide on silicon by nano-epitaxial lateral overgrowth
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT).
Show others and affiliations
2009 (English)In: 2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, 59-62 p.Conference paper, Published paper (Refereed)
Abstract [en]

InP on Si is grown by nano-epitaxial lateral overgrowth (nano-ELOG) on patterns consisting of net-type openings under different growth conditions. Analysis shows that net-type patterns yield large lateral growth rate and good optical quality. Different growth conditions have a substantial impact on growth rate and some effect on surface morphology, as well as on the optical quality. Optical quality is deemed to be affected partly by the amount of dislocations arising from the difference in thermal expansion coefficient between the mask and the InP layer, and partly by the layer thickness and surface morphology.

Place, publisher, year, edition, pages
2009. 59-62 p.
Series
International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
Keyword [en]
Epitaxial lateral overgrowth, Good optical quality, Growth conditions, Heterogeneous integration, InP, Lateral growth, Layer thickness, Optical qualities, Thermal expansion coefficients, Indium, Indium phosphide, Morphology, Semiconducting silicon compounds, Surface morphology, Thermal expansion
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-30437DOI: 10.1109/ICIPRM.2009.5012415ISI: 000270539400016Scopus ID: 2-s2.0-70349505800ISBN: 978-1-4244-3432-9 (print)OAI: oai:DiVA.org:kth-30437DiVA: diva2:399956
Conference
21st International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, MAY 10-14, 2009
Note
QC 20110224Available from: 2011-02-24 Created: 2011-02-24 Last updated: 2011-02-24Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Lourdudoss, Sebastian

Search in DiVA

By author/editor
Junesand, CarlOlsson, FredrikXiang, YuGau, Ming-HorngLourdudoss, Sebastian
By organisation
Semiconductor Materials, HMAIntegrated Devices and CircuitsSchool of Information and Communication Technology (ICT)
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 50 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf