Annealing of ion implanted 4H-SiC in the temperature range of 100-800 degrees C analysed by ion beam techniques
2010 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 268, no 11-12, 2083-2085 p.Article in journal (Refereed) Published
Ion implantation induced damage formation and subsequent annealing in 4H-SiC in the temperature range of 100-800 degrees C has been investigated. Silicon Carbide was implanted at room temperature with 200 key Ar-40 ions with two implantation fluences of 4 x 10(14) and 2 x 10(15) ions/cm(2). The samples were characterized by Rutherford backscattering and nuclear reaction analysis techniques in channeling mode using 2.00 and 4.30 MeV He-4 ion beams for damage buildup and recovery in the Si and C sublattices, respectively. At low ion fluence, the restoration of the Si sublattice is evident already at 200 degrees C and a considerable annealing step occurs between 300 and 400 degrees C. Similar results have been obtained for the C sublattice using the nuclear resonance reaction for carbon, C-12(alpha,alpha)C-12 at 4.26 MeV. For samples implanted with the higher ion fluence, no significant recovery is observed at these temperatures. (C) 2010 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2010. Vol. 268, no 11-12, 2083-2085 p.
4H-SiC, Implantation damage, Annealing, RBS, NRA, C-12(alpha, alpha)C-12
Atom and Molecular Physics and Optics Subatomic Physics
IdentifiersURN: urn:nbn:se:kth:diva-29698DOI: 10.1016/j.nimb.2010.02.020ISI: 000278702300085ScopusID: 2-s2.0-77953126931OAI: oai:DiVA.org:kth-29698DiVA: diva2:401676
QC 201103032011-03-032011-02-112012-01-17Bibliographically approved