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Annealing of ion implanted 4H-SiC in the temperature range of 100-800 degrees C analysed by ion beam techniques
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
2010 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 268, no 11-12, 2083-2085 p.Article in journal (Refereed) Published
Abstract [en]

Ion implantation induced damage formation and subsequent annealing in 4H-SiC in the temperature range of 100-800 degrees C has been investigated. Silicon Carbide was implanted at room temperature with 200 key Ar-40 ions with two implantation fluences of 4 x 10(14) and 2 x 10(15) ions/cm(2). The samples were characterized by Rutherford backscattering and nuclear reaction analysis techniques in channeling mode using 2.00 and 4.30 MeV He-4 ion beams for damage buildup and recovery in the Si and C sublattices, respectively. At low ion fluence, the restoration of the Si sublattice is evident already at 200 degrees C and a considerable annealing step occurs between 300 and 400 degrees C. Similar results have been obtained for the C sublattice using the nuclear resonance reaction for carbon, C-12(alpha,alpha)C-12 at 4.26 MeV. For samples implanted with the higher ion fluence, no significant recovery is observed at these temperatures. (C) 2010 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2010. Vol. 268, no 11-12, 2083-2085 p.
Keyword [en]
4H-SiC, Implantation damage, Annealing, RBS, NRA, C-12(alpha, alpha)C-12
National Category
Atom and Molecular Physics and Optics Subatomic Physics
Identifiers
URN: urn:nbn:se:kth:diva-29698DOI: 10.1016/j.nimb.2010.02.020ISI: 000278702300085Scopus ID: 2-s2.0-77953126931OAI: oai:DiVA.org:kth-29698DiVA: diva2:401676
Note

QC 20110303

Available from: 2011-03-03 Created: 2011-02-11 Last updated: 2017-12-11Bibliographically approved
In thesis
1. Impact of Ionizing Radiation on 4H-SiC Devices
Open this publication in new window or tab >>Impact of Ionizing Radiation on 4H-SiC Devices
2012 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. However, the radiation tolerance and reliability of SiC-based devices needs to be understood by testing devices  under controlled radiation environments. These kinds of studies have been previously performed on diodes and MESFETs, but multilayer devices such as bipolar junction transistors (BJT) have not yet been studied.

In this thesis, SiC material, BJTs fabricated from SiC, and various dielectrics for SiC passivation are studied by exposure to high energy ion beams with selected energies and fluences. The studies reveal that the implantation induced crystal damage in SiC material can be partly recovered at relatively low temperatures, for damag elevels much lower than needed for amorphization. The implantation experiments performed on BJTs in the bulk of devices show that the degradation in deviceperformance produced by low dose ion implantations can be recovered at 420 oC, however, higher doses produce more resistant damage. Ion induced damage at the interface of passivation layer and SiC in BJT has also been examined in this thesis. It is found that damaging of the interface by ionizing radiation reduces the current gain as well. However, for this type of damage, annealing at low temperatures further reduces the gain.

Silicon dioxide (SiO2) is today the dielectric material most often used for gate dielectric or passivation layers, also for SiC. However, in this thesis several alternate passivation materials are investigated, such as, AlN, Al2O3 and Ta2O5. These materials are deposited by atomic layer deposition (ALD) both as single layers and in stacks, combining several different layers. Al2O3 is further investigated with respect to thermalstability and radiation hardness. It is observed that high temperature treatment of Al2O3 can substantially improve the performance of the dielectric film. A radiation hardness study furthermore reveals that Al2O3 is more resistant to ionizing radiation than currently used SiO2 and it is a suitable candidate for devices in radiation rich applications.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2012. iv, 71 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2012:02
Keyword
Silicon carbide, ionizing radiation, bipolar junction transistors, reliability, surface passivation, high-k dielectrics, MIS, radiation hardness
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-60763 (URN)978-91-7501-225-4 (ISBN)
Public defence
2012-02-03, Sal C1, KTH-Electrum, Isafjordsgatan 22, Kista, 10:00 (English)
Opponent
Supervisors
Note
QC 20120117Available from: 2012-01-17 Created: 2012-01-14 Last updated: 2012-01-17Bibliographically approved

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Hallén, Anders

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