Selective Epitaxial Growth with Full Control of Pattern Dependency Behavior for pMOSFET Structures
2008 (English)In: SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES / [ed] Harame D; Caymax M; Koester S; Miyazaki S; Rim K; Tillack B; Boquet J; Cressier J; Masini G; Reznicek A; Takagi S, 2008, Vol. 16, no 10, 153-158 p.Conference paper (Refereed)
This study presents a way to design chips to obtain uniform selective epitaxial growth of SiGe layers in pMOSPET structures. The pattern dependency behavior of tile growth has been controlled over different sizes of transistors. It is shown that the exposed Si coverage of the chip is the main parameter in order to maintain control of the layer profile. This has been explained by gas depletion theory of the growth species in tile stationary boundary layer over tile wafer. The control of SiGe layer profile has been obtained over a wide range of device sizes by optimized process parameters in combination with a water pattern design consisting of dummy features causing uniform gas depletion over the chips of the wafer.
Place, publisher, year, edition, pages
2008. Vol. 16, no 10, 153-158 p.
, ECS Transactions, ISSN 1938-5862 ; vol. 16 nr 10
Device sizes, Different sizes, Full controls, Growth species, Main parameters, Optimized process, Pattern dependencies, pMOSFET, Selective epitaxial growths, SiGe layers, Wafer patterns, Epitaxial growth, Epitaxial layers, Germanium, Molecular beam epitaxy, MOSFET devices, Semiconducting germanium compounds, Silicon alloys, Silicon wafers, Structural design
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-30344DOI: 10.1149/1.2986762ISI: 000273336700015ScopusID: 2-s2.0-63149135697ISBN: 978-1-56677-656-1OAI: oai:DiVA.org:kth-30344DiVA: diva2:401718
3rd International SiGe, Ge, and Related Compounds Symposium, Honolulu, HI, OCT 12-17, 2008
QC 201103032011-03-032011-02-242011-03-04Bibliographically approved