Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual Substrates
2008 (English)In: SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES : MATERIALS, PROCESSING, AND DEVICES / [ed] Harame D; Caymax M; Koester S; Miyazaki S; Rim K; Tillack B; Boquet J; Cressier J; Masini G; Reznicek A; Takagi S, 2008, Vol. 16, no 10, 529-537 p.Conference paper (Refereed)
It was found that for strained Si channel layers of supercritical thickness oil relaxed SiGe virtual substrates, the 1/f noise oil,average is maintained at the same level as in unstrained devices. Short gate length nMOSFETs were analyzed statistically and the noise level variation, across a large number of samples, was similar in strained and unstrained devices. The obtained noise level variation was partly related to gate length fluctuations across the wafer, which was evident from a small V-T fluctuation.
Place, publisher, year, edition, pages
2008. Vol. 16, no 10, 529-537 p.
, ECS Transactions, ISSN 1938-5862 ; vol. 16 nr 10
Gate lengths, High mobilities, MOSFETs, N-mosfets, Noise levels, Noise properties, Number of samples, Relaxed sige, Strained Si channels, Super-critical, Virtual substrates, Germanium, MOSFET devices, Semiconducting germanium compounds, Silicon alloys, Silicon wafers
IdentifiersURN: urn:nbn:se:kth:diva-30345DOI: 10.1149/1.2986809ISI: 000273336700060ScopusID: 2-s2.0-63149147870ISBN: 978-1-56677-656-1OAI: oai:DiVA.org:kth-30345DiVA: diva2:401749
3rd International SiGe, Ge, and Related Compounds Symposium, Honolulu, HI, OCT 12-17, 2008
QC 201103032011-03-032011-02-242011-03-03Bibliographically approved