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Manganese in 4H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-0292-224X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
2010 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 645-648, 701-704 p.Article in journal (Refereed) Published
Abstract [en]

Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 degrees C. The depth distribution of manganese is recorded by secondary ion mass spectrometry and Rutherford backscattering spectrometry in the channeling direction is employed for characterization of crystal disorder. After the heat treatment, the crystal order is improved and a substantial rearrangement of manganese is revealed in the implanted region. However, no pronounced manganese diffusion deeper into the sample is recorded.

Place, publisher, year, edition, pages
2010. Vol. 645-648, 701-704 p.
Keyword [en]
Manganese, 4H-SiC, Ion implantation, Diffusion, SIMS, RBS
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-29664DOI: 10.4028/www.scientific.net/MSF.645-648.701ISI: 000279657600166Scopus ID: 2-s2.0-77955446152OAI: oai:DiVA.org:kth-29664DiVA: diva2:401851
Note
QC 20110304Available from: 2011-03-04 Created: 2011-02-11 Last updated: 2017-12-11Bibliographically approved

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Linnarsson, Margareta KHallén, Anders

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