Simulations of Open Emitter Breakdown Voltage in SiC BJTs with non Implanted JTE
2009 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 615-617, 841-844 p.Article in journal (Refereed) Published
Ion implantation for selective doping of SiC is problematic due to damage generation during the process and low activation of dopants. In SiC bipolar junction transistor (BJT) the junction termination extension (JTE) can be formed without ion implantation using instead a controlled etching into the epitaxial base. This etched JTE is advantageous because it eliminates ion implantation induced damage and the need for high temperature annealing. However, the dose, which is controlled by the etched base thickness and doping concentration, plays a crucial role. In order to find the optimum parameters, device simulations of different etched base thicknesses have been performed using the software Sentaurus Device. A surface passivation layer consisting of silicon dioxide, considering interface traps and fixed trapped charge, has been included in the analysis by simulations. Moreover a comparison with measured data for fabricated SiC BJTs has been performed.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2009. Vol. 615-617, 841-844 p.
silicon carbide, simulation, etched JTE, breakdown voltage, fixed charge, interface traps
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-30863DOI: 10.4028/www.scientific.net/MSF.615-617.841ISI: 000265961100204ScopusID: 2-s2.0-79251561870OAI: oai:DiVA.org:kth-30863DiVA: diva2:402121
7th European Conference on Silicon Carbide and Related Materials Barcelona, SPAIN, SEP 07-11, 2008
QC 201103072011-03-072011-03-042016-05-11Bibliographically approved