Implantation-Free Low on-resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
2009 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 615-617, 833-836 p.Article in journal (Refereed) Published
In this study, high voltage blocking (2.7 kV) implantation-free SiC Bipolar Junction Transistors with low on-state resistance (12 m Omega-cm(2)) and high common-emitter current gain of 50 have been fabricated. A graded base doping was implemented to provide a low resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial JTE without ion implantation. Eliminating all ion implantation steps in this approach is beneficial for avoiding high temperature dopant activation annealing and for avoiding generation of life-time killing defects that reduces the current gain. Also in this process large area transistors showed common-emitter current gain of 38 and open-base breakdown voltage of 2 kV.
Place, publisher, year, edition, pages
STAFA-ZURICH: Trans Tech Publications Inc., 2009. Vol. 615-617, 833-836 p.
Bipolar Junction Transistors (BJTs), power transistors, silicon carbide
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-30862DOI: 10.4028/www.scientific.net/MSF.615-617.833ISI: 000265961100202ScopusID: 2-s2.0-77955460287ISBN: 978-087849334-0OAI: oai:DiVA.org:kth-30862DiVA: diva2:402147
7th European Conference on Silicon Carbide and Related Materials Barcelona, SPAIN, SEP 07-11, 2008
QC 201103072011-03-072011-03-042016-05-11Bibliographically approved