Assessment of High and Low Temperature Performance of SiC BJTs
2009 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2008, STAFA-ZURICH: TRANS TECH PUBLICATIONS LTD , 2009, Vol. 615-617, 825-828 p.Conference paper (Refereed)
This paper addresses the performance of SiC NPN Bipolar Junction Transistors (BJTs) at high and low temperature. A current gain of 50 at room temperature was obtained which decreases to 25 at 275 degrees C. A maximum current gain (beta) of 111 has been reported at -86 degrees C. At low temperature (below -86 degrees C), the current gain drops rapidly because of carrier freezout effect. At room temperature, a minimum on-resistance of 7 m Omega-cm(2) was obtained. This increases to 28 m Omega-cm(2) at 275 degrees C. The on-resistance of BJTs is approximately unaffected by lowering the temperature down to -86 degrees C front room temperature. Below -86 degrees C, the on-reststance JUMPS up rapidly because of carrier freezeout. Electrical performance of BJTs have been fairly stable during stress measurement at high temperature (120 hours at 100 degrees C) at a collector bias of 1000V (with open base) for devices with a breakdown voltage of 1200VA. The devices have been stressed further at low (i.e., 6) and high gain (i.e., 15) at room temperature. Initial degradation within first hour of stress test has been reported and then degradation stabilizes out. Packaged devices were tested Lip to 550 degrees C and performed admirably well up to that temperature.
Place, publisher, year, edition, pages
STAFA-ZURICH: TRANS TECH PUBLICATIONS LTD , 2009. Vol. 615-617, 825-828 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 615-617
SiC, SiC BJTs, bipolar junction transistors, bipolar devices, characterization
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-30861DOI: 10.4028/www.scientific.net/MSF.615-617.825ISI: 000265961100200ScopusID: 2-s2.0-77949396641OAI: oai:DiVA.org:kth-30861DiVA: diva2:402153
7th European Conference on Silicon Carbide and Related Materials Barcelona, SPAIN, SEP 07-11, 2008
QC 201103072011-03-072011-03-042011-03-18Bibliographically approved