Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Assessment of High and Low Temperature Performance of SiC BJTs
Show others and affiliations
2009 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2008, STAFA-ZURICH: TRANS TECH PUBLICATIONS LTD , 2009, Vol. 615-617, 825-828 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper addresses the performance of SiC NPN Bipolar Junction Transistors (BJTs) at high and low temperature. A current gain of 50 at room temperature was obtained which decreases to 25 at 275 degrees C. A maximum current gain (beta) of 111 has been reported at -86 degrees C. At low temperature (below -86 degrees C), the current gain drops rapidly because of carrier freezout effect. At room temperature, a minimum on-resistance of 7 m Omega-cm(2) was obtained. This increases to 28 m Omega-cm(2) at 275 degrees C. The on-resistance of BJTs is approximately unaffected by lowering the temperature down to -86 degrees C front room temperature. Below -86 degrees C, the on-reststance JUMPS up rapidly because of carrier freezeout. Electrical performance of BJTs have been fairly stable during stress measurement at high temperature (120 hours at 100 degrees C) at a collector bias of 1000V (with open base) for devices with a breakdown voltage of 1200VA. The devices have been stressed further at low (i.e., 6) and high gain (i.e., 15) at room temperature. Initial degradation within first hour of stress test has been reported and then degradation stabilizes out. Packaged devices were tested Lip to 550 degrees C and performed admirably well up to that temperature.

Place, publisher, year, edition, pages
STAFA-ZURICH: TRANS TECH PUBLICATIONS LTD , 2009. Vol. 615-617, 825-828 p.
Series
MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 615-617
Keyword [en]
SiC, SiC BJTs, bipolar junction transistors, bipolar devices, characterization
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-30861DOI: 10.4028/www.scientific.net/MSF.615-617.825ISI: 000265961100200Scopus ID: 2-s2.0-77949396641OAI: oai:DiVA.org:kth-30861DiVA: diva2:402153
Conference
7th European Conference on Silicon Carbide and Related Materials Barcelona, SPAIN, SEP 07-11, 2008
Note
QC 20110307Available from: 2011-03-07 Created: 2011-03-04 Last updated: 2011-03-18Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Domeij, MartinÖstling, Mikael
By organisation
Integrated Devices and Circuits
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 46 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf