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Towards Schottky-Barrier Source/Drain MOSFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
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2008 (English)In: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 / [ed] Yu M, An X, NEW YORK: IEEE , 2008, 146-149 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper provides an overview of metal source/drain (S/D) Schottky-barrier (SB) MOSFET technology. The technology offers several benefits for scaling CMOS, i.e., extremely low source/drain resistance, sharp junctions from S/D to channel and low temperature processing. A successful implementation of the technology needs to overcome new obstacles such as SB height engineering and precise control of silicide growth. Device design factors such as S/D to gate underlap, Si film thickness and oxide thickness affect device performance owing to their effects on the SB width. In the past two years several groups have demonstrated high-performance SB MOSFETs, which places the technology as a promising candidate for future generations of CMOS technology.

Place, publisher, year, edition, pages
NEW YORK: IEEE , 2008. 146-149 p.
Keyword [en]
thin-body soi, dopant segregation, performance, devices, transistors, technology, finfets
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-30859DOI: 10.1109/ICSICT.2008.4734492ISI: 000265971000038Scopus ID: 2-s2.0-60649112513ISBN: 978-1-4244-2185-5 (print)OAI: oai:DiVA.org:kth-30859DiVA: diva2:402157
Conference
9th International Conference on Solid-State and Integrated-Circuit Technology Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Note
QC 20110307Available from: 2011-03-07 Created: 2011-03-04 Last updated: 2011-03-07Bibliographically approved

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Hellström, Per-ErikMalm, B. Gunnar

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Östling, MikaelGudmundsson, ValurHellström, Per-ErikMalm, B. GunnarZhang, ZhenZhang, Shi-Li
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