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Effect of collision cascade density on radiation damage in SiC
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
2009 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 267, no 8-9, 1247-1250 p.Article in journal (Refereed) Published
Abstract [en]

The damage accumulation in 6H-SiC bombarded at room temperature with 1.3 keV/amu atomic P+ ions and small cluster ions PFn+ (n = 2 and 4) have been studied by Rutherford backscattering spectrometry in channeling mode. Results show that collision cascade density strongly affects damage buildup in SiC. The cluster ion bombardment of SiC produces more stable defects both near the surface and in the region between the surface and bulk defect peaks than irradiation by atomic ions.

Place, publisher, year, edition, pages
2009. Vol. 267, no 8-9, 1247-1250 p.
Keyword [en]
Ion implantation, Cluster ions, Defects, Collision cascades, SiC
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-30842DOI: 10.1016/j.nimb.2009.01.025ISI: 000266519900010Scopus ID: 2-s2.0-65249109371OAI: oai:DiVA.org:kth-30842DiVA: diva2:402527
Note
QC 20110308Available from: 2011-03-08 Created: 2011-03-04 Last updated: 2017-12-11Bibliographically approved

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Hallén, Anders

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