Electrical and structural characterization of ion implanted GaN
2009 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 267, no 8-9, 1561-1563 p.Article in journal (Refereed) Published
Ion implantation induced defects and their consequent electrical impact have been investigated. Unintentionally doped n-type gallium nitride was implanted with 100 keV Si+ and 300 keV Ar+ ions in a fluence range of 10(14)-10(15) ions/cm(2). The samples were characterized with Rutherford backscattering/Channeling method for damage buildup. Time of flight elastic recoil detection analysis was implied on the Si implanted samples to see the ion depth distribution. At implanted GaN samples were studied electrically with scanning spreading resistance microscopy. Our results show that an At fluence of 5 x 10(14) cm(-2) increases the resistance by five orders of magnitude to a maximum value. For the highest fluence, 6 x 10(15) cm(-2), the resistivity decreases by two orders of magnitude.
Place, publisher, year, edition, pages
2009. Vol. 267, no 8-9, 1561-1563 p.
GaN, Ion implantation, Damage, Device isolation, RBS, ERDA
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-30843DOI: 10.1016/j.nimb.2009.01.091ISI: 000266519900086ScopusID: 2-s2.0-65249139515OAI: oai:DiVA.org:kth-30843DiVA: diva2:402607
QC 201103092011-03-092011-03-042011-03-09Bibliographically approved