Characterization of dopant segregated Schottky barrier source/drain contacts
2009 (English)In: ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON / [ed] Mantl S, Lemme M, Schubert J, Albrecht W, NEW YORK: IEEE , 2009, 73-76 p.Conference paper (Refereed)
In this paper, the gate-voltage dependent source/drain (S/D) resistance (R-SD) in dopant segregated (DS) Schottky barrier (SB) junctions is examined by experiment and simulation. The focus is placed on fully depleted UTB-SOI MOSFETs featuring PtSi S/D with As-DS realized at low temperatures. When modeling SB-S/D with DS, it is challenging to determine if the performance enhancement observed is induced by a highly doped shallow layer in Si or by an interfacial dipole causing SB height lowering. The simulation reveals that the gate-voltage dependence of R-SD is stronger for the dipole effect. For the SB-MOSFETs with DS-S/D examined in this work, the simulation gives an excellent fit to the measured data when SBH lowering is combined with high concentration shallow doping.
Place, publisher, year, edition, pages
NEW YORK: IEEE , 2009. 73-76 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-30831DOI: 10.1109/ULIS.2009.4897542ISI: 000266761300018ScopusID: 2-s2.0-67650655703ISBN: 978-1-4244-3705-4OAI: oai:DiVA.org:kth-30831DiVA: diva2:403020
10th International Conference on Ultimate Integration on Silicon Aachen, GERMANY, MAR 18-20, 2009
QC 201103102011-03-102011-03-042011-12-06Bibliographically approved