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Study of Pseudo Spin Valves Based on L1(0) (111)-Oriented FePt and FePtCu Fixed Layer With Tilted Magnetocrystalline Anisotropy
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2009 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 45, no 10, 3491-3494 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, we demonstrate a series of pseudo-spin-valve structures based on L1(0) (111)-oriented FePt and FePtCu with titled magnetocrystalline anisotropy. Highly ordered (111)-oriented L1(0) FePtCu with large anisotropy is achieved by optimizing the Cu content. Magnetoresistance (MR) up to 5% has been obtained by 1) optimizing the FePtCu growth using different underlayers, 2) enhancing the interface spin polarization using thin CoFe at the Cu interfaces, and 3) adjusting the Cu spacer thickness. The substantial MR realized with tilted fixed layer magnetization is an important prerequisite for the realization of tilted polarizer spin torque oscillators (STOs) or spin-transfer torque magnetoresistive random access memories (STT-MRAMs).

Place, publisher, year, edition, pages
2009. Vol. 45, no 10, 3491-3494 p.
Keyword [en]
L1(0) FePt, L1(0) FePtCu, magnetoresistance (MR), pseudo spin valve, titled anisotropy
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-30667DOI: 10.1109/TMAG.2009.2022317ISI: 000270149700023Scopus ID: 2-s2.0-70350577047OAI: oai:DiVA.org:kth-30667DiVA: diva2:403119
Note
QC 20110311 International Magnetics Conference 2009 (INTERMAG), Sacramento, CA, MAY 04-08, 2009Available from: 2011-03-11 Created: 2011-03-04 Last updated: 2017-12-11Bibliographically approved

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