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Silicon Photonic Crystal Surface Mode Microcavities
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
2008 (English)In: 2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2, NEW YORK: IEEE , 2008, 15-18 p.Conference paper, Published paper (Refereed)
Abstract [en]

High-Q surface mode micro-cavities in silicon-on-insulator (SOI) structures are investigated. Cavity structures in amorphous silicon based SOI structures show intrinsic Q values of 2000, while cavities in crystalline SOI structures can have intrinsic Q values larger than 10(4).

Place, publisher, year, edition, pages
NEW YORK: IEEE , 2008. 15-18 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-30811DOI: 10.1109/IPGC.2008.4781302ISI: 000267591100005Scopus ID: 2-s2.0-67649655880ISBN: 978-1-4244-3901-0 (print)OAI: oai:DiVA.org:kth-30811DiVA: diva2:403232
Conference
IEEE PhotonicsGlobal at Singapore Singapore, SINGAPORE, DEC 08-11, 2008
Note
QC 20110311Available from: 2011-03-11 Created: 2011-03-04 Last updated: 2011-03-11Bibliographically approved

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