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Pseudo-spin-valve with L1(0) (111)-oriented FePt fixed layer
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
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2009 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 105, no 7, 07E910- p.Article in journal (Refereed) Published
Abstract [en]

Recently we proposed a spin torque oscillator where the fixed layer has its magnetization easy-axis tilted with respect to the film plane to simultaneously achieve zero-field operation and high output power [Y. Zhou, C. L. Zha, S. Bonetti, J. Persson, and J. angstrom kerman, Appl. Phys. Lett. 92, 262508 (2008)]. Here we take the first step toward the realization of this device and fabricate successfully a pseudo-spin-valve using an L1(0) (111)-oriented FePt fixed layer with tilted magnetocrystalline anisotropy. A total magnetoresistance (MR) of 0.86% is experimentally observed for the standard pseudo-spin-valve of the L1(0) FePt/Cu/NiFe structure in applied fields up to 1.5 T. While part of the MR may originate from the FePt film alone, the dominating part of MR correlates with switching of the NiFe free layer.

Place, publisher, year, edition, pages
2009. Vol. 105, no 7, 07E910- p.
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Other Engineering and Technologies not elsewhere specified
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URN: urn:nbn:se:kth:diva-30808DOI: 10.1063/1.3072880ISI: 000266633500735Scopus ID: 2-s2.0-65249137171OAI: oai:DiVA.org:kth-30808DiVA: diva2:403253
Note
QC 20110311Available from: 2011-03-11 Created: 2011-03-04 Last updated: 2017-12-11Bibliographically approved

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Zha, ChaolinBonetti, StefanoPersson, JohanZhou, YanÅkerman, Johan
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