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Composition dependent properties of Fe3Si films grown on GaAs(113)A substrates
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
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2009 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 105, no 7, 07B104- p.Article in journal (Refereed) Published
Abstract [en]

Structural, electrical, and magnetic properties of Fe3Si/GaAs(113)A hybrid structures are studied, dependent on the layer composition varying from 15 to 26 at. % Si. The presence of superlattice reflections in x-ray diffraction and lower resistivity confirms the long-range atomic ordering in the stoichiometric Fe3Si films, reflecting the D0(3) crystal structure. The observed atomic ordering is also found to influence the sign and magnitude of the antisymmetric component of the planar Hall effect observed in this orientation. However a finite disorder is observed even in nearly stoichiometric samples.

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2009. Vol. 105, no 7, 07B104- p.
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Other Engineering and Technologies not elsewhere specified
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URN: urn:nbn:se:kth:diva-30806DOI: 10.1063/1.3072832ISI: 000266633500275Scopus ID: 2-s2.0-65249116287OAI: oai:DiVA.org:kth-30806DiVA: diva2:403268
Note
QC 20110311Available from: 2011-03-11 Created: 2011-03-04 Last updated: 2017-12-11Bibliographically approved

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Muduli, Pranaba
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