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Singlet oxygen inhibits nonradiative defects in porous silicon
KTH, School of Information and Communication Technology (ICT), Material Physics, Material Physics, MF.
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2009 (English)In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, ISSN 1862-6300, Vol. 206, no 6, 1268-1272 p.Article in journal (Refereed) Published
Abstract [en]

Experimental evidences are presented for the first time that singlet oxygen generated ex situ acts as an inhibitor of nonradiative recombination in porous silicon (PSi). This effect is observed on a pristine PSi as well as on degraded porous layers quenched by ozone adsorption. A photoluminescence (PL) enhancement produced by singlet oxygen is accompanied with only slight oxidation of a PSi. We assume that the observed effect on PL efficiency is due to gentle selective oxidation of single defects on silicon nanocrystal surface.

Place, publisher, year, edition, pages
2009. Vol. 206, no 6, 1268-1272 p.
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Other Engineering and Technologies not elsewhere specified
URN: urn:nbn:se:kth:diva-30802DOI: 10.1002/pssa.200881055ISI: 000267527800030ScopusID: 2-s2.0-67649978271OAI: diva2:403316
QC 20110311(International Workshop on Nitride Semiconductors Montreux, SWITZERLAND, OCT 06-10, 2008)Available from: 2011-03-11 Created: 2011-03-04 Last updated: 2011-03-11Bibliographically approved

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Kuznetsov, Alexandr
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