Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0002-0977-2598
2011 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 314, no 1, 119-122 p.Article in journal (Refereed) Published
Abstract [en]

Zn3As2 epitaxial layers were grown on GaAs (1 0 0) substrates by liquid phase epitaxy (LPE) using Ga as the solvent. Zinc mole fraction in the growth melt was varied from 1.07 x 10(-2) to 6 x 10(-2). X-ray diffraction spectrum exhibits a sharp peak at 43.3 degrees characteristic of Zn3As2 crystalline layer. The peak intensity increases with increase in zinc mole fraction in the growth melt. The compositions of the as-grown Zn3As2 layers were confirmed by energy dispersive X-ray (EDX) analysis. Surface morphology was studied using scanning electron microscopy (SEM) and the thickness of the epilayers was also determined. The Hall measurements at 300 K indicate that Zn3As2 epilayers are unintentionally p-doped. With an increase of zinc mole fraction in the growth melt, carrier concentration increases and carrier mobility decreases. Infrared optical absorption spectroscopy showed a sharp absorption edge at 1.0 eV corresponding to the reported band gap of Zn3As2. (C) 2010 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2011. Vol. 314, no 1, 119-122 p.
Keyword [en]
X-ray diffraction, Liquid phase epitaxy, Zinc compounds, Semiconducting materials
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-31004DOI: 10.1016/j.jcrysgro.2010.11.126ISI: 000286853400024Scopus ID: 2-s2.0-78651103849OAI: oai:DiVA.org:kth-31004DiVA: diva2:404402
Note
QC 20110317Available from: 2011-03-17 Created: 2011-03-07 Last updated: 2017-12-11Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Lourdudoss, Sebastian

Search in DiVA

By author/editor
Nagarajan, MonyLourdudoss, Sebastian
By organisation
Semiconductor Materials, HMA
In the same journal
Journal of Crystal Growth
Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 54 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf