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High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2008 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 154, 106-109 p.Article in journal (Refereed) Published
Abstract [en]

This work presents the selective epitaxial growth (SEG) of Si1-xGex (x=0.15-0.315) layers with high amount of boron (1 x 10(20)-1 x 10(21) cm(-3)) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been Studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

Place, publisher, year, edition, pages
2008. Vol. 154, 106-109 p.
Keyword [en]
Selective epitaxy, RPCVD, Boron doping, Recessed junctions
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-31571DOI: 10.1016/j.mseb.2008.08.014ISI: 000262187600022Scopus ID: 2-s2.0-56949086156OAI: oai:DiVA.org:kth-31571DiVA: diva2:404909
Note
QC 20110318Available from: 2011-03-18 Created: 2011-03-18 Last updated: 2017-12-11Bibliographically approved

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Radamson, Henry H.Kolahdouz, MohammadrezaGhandi, RezaÖstling, Mikael
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Electrical Engineering, Electronic Engineering, Information Engineering

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