High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers
2008 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 154, 106-109 p.Article in journal (Refereed) Published
This work presents the selective epitaxial growth (SEG) of Si1-xGex (x=0.15-0.315) layers with high amount of boron (1 x 10(20)-1 x 10(21) cm(-3)) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been Studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.
Place, publisher, year, edition, pages
2008. Vol. 154, 106-109 p.
Selective epitaxy, RPCVD, Boron doping, Recessed junctions
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-31571DOI: 10.1016/j.mseb.2008.08.014ISI: 000262187600022ScopusID: 2-s2.0-56949086156OAI: oai:DiVA.org:kth-31571DiVA: diva2:404909
QC 201103182011-03-182011-03-182011-03-18Bibliographically approved